PHP18NQ11T,127 NXP Semiconductors, PHP18NQ11T,127 Datasheet - Page 3

• Manufacturer Part Number: PHP18NQ11T,127
• Description: MOSFET N-CH 110V 18A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP18NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 79W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 18A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 79000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058144127::PHP18NQ11T::PHP18NQ11T

NXP Semiconductors
PHP18NQ11T_2
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
10
10
I
(%)
1
der
2
120
−1
80
40
0
1
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area: continuous and peak currents as a function of drain-source voltage
0
50
Limit R
DSon
100
= V
DS
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
10
mb
03aa24
(°C)
200
Rev. 02 — 10 March 2010
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
10
2
1 ms
t
10 ms
100 ms
100 μs
p
50
= 10 μs
100
PHP18NQ11T
V
DS
150
(V)
© NXP B.V. 2010. All rights reserved.
T
mb
003aaa591
03aa16
(°C)
200
10
3
3 of 13