PHP18NQ11T,127 NXP Semiconductors, PHP18NQ11T,127 Datasheet - Page 5

• Manufacturer Part Number: PHP18NQ11T,127
• Description: MOSFET N-CH 110V 18A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP18NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 79W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 18A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 79000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058144127::PHP18NQ11T::PHP18NQ11T

NXP Semiconductors
6. Characteristics
Table 6.
PHP18NQ11T_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
I
see
I
V
D
D
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C; see
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 18 A; V
= 18 A; V
= 18 A; dI
Figure 8
Figure 8
Figure 8
Figure 9
Figure 9
Figure 13
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= 110 V; V
= 110 V; V
= 25 V; V
= 50 V; R
= 25 V; T
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 5.6 Ω; T
GS
DS
S
Rev. 02 — 10 March 2010
DS
DS
DS
D
D
and
and
/dt = 100 A/µs; V
j
DS
GS
L
GS
GS
DS
= 25 °C
GS
GS
= 9 A; T
= 9 A; T
= 80 V; V
= 0 V; T
= V
= V
= V
= 2.7 Ω; V
Figure 11
Figure 12
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
10
10
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C; I
GS
GS
GS
; T
; T
; T
j
j
j
= 175 °C;
= 25 °C;
= 25 °C;
j
j
j
GS
j
= 175 °C;
= 25 °C;
= -55 °C;
j
j
j
GS
= 25 °C
j
j
= -55 °C
= 25 °C
= 25 °C
= 25 °C
= 175 °C
= 10 V;
D
= 10 V;
= 18.5 A
GS
= 0 V;
N-channel TrenchMOS standard level FET
Min
98
110
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PHP18NQ11T
Typ
-
-
-
3
-
0.05
-
10
10
-
80
21
4
8
633
103
61
6
12
0.92
55
135
36
18
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4
4.4
10
500
100
100
243
90
-
-
-
-
-
-
-
-
-
-
1.2
-
-
µA
nC
nC
pF
ns
nC
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
nC
pF
pF
ns
ns
ns
V
ns
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