PHP18NQ11T,127 NXP Semiconductors, PHP18NQ11T,127 Datasheet - Page 4

• Manufacturer Part Number: PHP18NQ11T,127
• Description: MOSFET N-CH 110V 18A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP18NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 79W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 18A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 79000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058144127::PHP18NQ11T::PHP18NQ11T

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHP18NQ11T_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−5
Thermal characteristics
δ = 0.5
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
0.05
0.02
0.1
0.2
single pulse
10
−4
Conditions
see
in free air
Figure 4
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 10 March 2010
−3
10
−2
N-channel TrenchMOS standard level FET
Min
-
-
10
PHP18NQ11T
−1
P
Typ
-
60
t
p
t p (s)
© NXP B.V. 2010. All rights reserved.
T
003aaa592
Max
1.9
-
δ =
t
T
t
p
1
Unit
K/W
K/W
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