BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet - Page 10

• Manufacturer Part Number: BUK7107-55AIE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55AIE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057272118; BUK7107-55AIE /T3; BUK7107-55AIE /T3

Philips Semiconductors
6. Package outline
Fig 17. SOT426 (D
9397 750 09877
Product data
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT426
4.50
4.10
A
H D
1.40
1.27
2
A 1
D
-PAK).
D 1
0.85
0.60
b
IEC
1
0.64
0.46
c
e
max.
11
D
2
e
E
JEDEC
1.60
1.20
3
D 1
4
e
REFERENCES
Rev. 01 — 12 August 2002
10.30
e
9.70
E
0
5
1.70
b
e
scale
EIAJ
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
2.60
2.20
mounting
2
Q
-PAK); 5 leads
base
BUK71/7907-55AIE
L p
TrenchPLUS standard level FET
A 1
Q
PROJECTION
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
c
EUROPEAN
A
ISSUE DATE
98-12-14
99-06-25
SOT426
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