BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet - Page 6

• Manufacturer Part Number: BUK7107-55AIE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55AIE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057272118; BUK7107-55AIE /T3; BUK7107-55AIE /T3

Philips Semiconductors
Table 4:
T
9397 750 09877
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
SD
r
= 25 C unless otherwise specified.
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
…continued
Conditions
I
Figure 16
I
V
S
S
GS
= 25 A; V
= 20 A; dI
= 10 V; V
Rev. 01 — 12 August 2002
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Min
-
-
-
BUK71/7907-55AIE
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
0.85
80
200
Max
1.2
-
-
Unit
V
ns
nC
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