BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7107-55AIE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55AIE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057272118; BUK7107-55AIE /T3; BUK7107-55AIE /T3

Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
9397 750 09877
Product data
Symbol
V
V
V
I
I
P
I
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
Electrostatic Discharge
V
D
DM
GS(CL)
DR
DRM
esd
DS
DGS
GS
tot
stg
j
DS(AL)S
Current is limited by power dissipation chip rating
Continuous current is limited by package.
Limiting values
Parameter
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
gate-source clamping current
storage temperature
junction temperature
reverse drain current
peak reverse drain current
non-repetitive drain-source avalanche
energy
electrostatic discharge voltage; all pins Human Body Model; C = 100 pF;
Rev. 01 — 12 August 2002
Conditions
T
Figure 2
T
T
Figure 3
T
continuous
t
T
T
unclamped inductive load; I
V
starting T
R = 1.5 k
I
p
DG
mb
mb
mb
mb
mb
mb
DS
= 5 ms;
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 250 A
55 V; V
and
j
= 25 C
= 0.01
3
Figure 1
GS
GS
GS
= 10 V; R
= 10 V;
= 10 V;
p
p
BUK71/7907-55AIE
10 s;
10 s
GS
Figure 2
D
= 68 A;
= 50 ;
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
[1]
[2]
[2]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
55
55
140
75
75
560
272
10
50
+175
+175
140
75
560
460
6
20
Unit
V
V
V
A
A
A
A
W
mA
mA
A
A
A
mJ
kV
C
C
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