BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet - Page 12

• Manufacturer Part Number: BUK7107-55AIE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55AIE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057272118; BUK7107-55AIE /T3; BUK7107-55AIE /T3

Philips Semiconductors
7. Soldering
9397 750 09877
Product data
Fig 19. Reflow soldering footprint for SOT426.
Dimensions in mm.
handbook, full pagewidth
8.15
7.95
4.85
8.35
solder lands
solder resist
occupied area
solder paste
2.25
4.60
3.00
2.15
1.50
0.30
1.50
Rev. 01 — 12 August 2002
1.70
(2 )
10.85
10.60
10.50
7.50
7.40
8.15
3.40
1.70
BUK71/7907-55AIE
0.90
1.00
MSD058
0.20
TrenchPLUS standard level FET
5.40
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.275
8.075
12 of 15