SPP12N50C3 Infineon Technologies, SPP12N50C3 Datasheet
SPP12N50C3
Specifications of SPP12N50C3
SPP12N50C3IN
SPP12N50C3X
SPP12N50C3XK
SPP12N50C3XTIN
SPP12N50C3XTIN
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SPP12N50C3 Summary of contents
Page 1
... PG-TO220-3-31 PG-TO262- P-TO220-3-31 Ordering Code Q67040-S4579 Q67040-S4578 SP000216322 Symbol puls jmax limited jmax limited jmax tot dv/dt Page 1 SPP12N50C3 SPI12N50C3, SPA12N50C3 @ T 560 V DS jmax R 0.38 DS(on) I 11.6 D PG-TO220 P-TO220-3-1 Marking 12N50C3 12N50C3 12N50C3 Value SPP_I SPA 11.6 11 34.8 34.8 340 340 ...
Page 2
... GS(th =500V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =7A V DS(on =25° =150° f=1MHz, open drain R G Page 2 SPP12N50C3 Value Unit 50 V/ns Values Unit min. typ. max K 3 260 °C Values Unit min. typ. max. - ...
Page 3
... I =11.6A d(off =400V, I =11. =400V, I =11.6A 10V =400V, I =11. (plateau) DD =400V, V < <T peak BR, DSS j j,max Page 3 SPP12N50C3 SPI12N50C3, SPA12N50C3 Values min. typ. max 1200 - 400 - =0/10V * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...
Page 4
... Unit Symbol SPA 0.15 K/W C th1 0.03 C th2 0.056 C th3 0.194 C th4 0.413 C th5 2.522 C th6 th1 th th1 th2 th,n Page 4 SPP12N50C3 SPI12N50C3, SPA12N50C3 Values min. typ 380 = 5 1100 Value SPP_I SPA 0.0001878 0.0001878 0.0007106 0.0007106 0.000988 0.000988 0.002791 0.002791 ...
Page 5
... C SPP12N50C3 140 W 120 110 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. 3.1 2 Power dissipation FullPAK tot 100 120 °C 160 Safe operating area FullPAK parameter Page 5 SPP12N50C3 SPI12N50C3, SPA12N50C3 ) 100 120 ) DS = 25° 0.001 0. 0 209-11-30 °C 160 ...
Page 6
... DS j parameter µ 20V A 10V Rev. 3.1 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 10 single pulse Typ. output characteristic parameter 6.5V 6V 5. Page 6 SPP12N50C3 SPI12N50C3, SPA12N50C3 = 0.01 single pulse - =150° µ 20V ...
Page 7
... Typ. gate charge = DS(on)max GS parameter 150° Page 7 SPP12N50C3 SPI12N50C3, SPA12N50C3 = SPP12N50C3 1 98% typ 0 -60 - 100 ) Gate = 11.6 A pulsed D SPP12N50C3 max 10 0 °C 180 max Gate 2009-11-30 ...
Page 8
... 2 Drain-source breakdown voltage V (BR)DSS 600 V 570 560 550 540 530 520 510 500 490 480 470 460 450 120 °C 160 - Page 8 SPP12N50C3 SPI12N50C3, SPA12N50C3 ) AR T =125° (START SPP12N50C3 - 100 2009-11-30 =25°C j (START) 4 µ °C 180 T j ...
Page 9
... Avalanche power losses parameter: E =0.6mJ AR 300 W 200 150 100 Typ. C stored energy oss oss DS 6 µ 100 200 Rev. 3.1 18 Typ. capacitances parameter 300 V 500 V DS Page 9 SPP12N50C3 SPI12N50C3, SPA12N50C3 ) DS =0V, f=1 MHz Ciss Coss Crss 100 200 300 V 500 V DS 2009-11-30 ...
Page 10
... Definition of diodes switching characteristics Rev. 3.1 SPI12N50C3, SPA12N50C3 Page 10 SPP12N50C3 2009-11-30 ...
Page 11
... PG-TO-220-3-1, PG-TO220-3-21 Rev. 3.1 SPI12N50C3, SPA12N50C3 Page 11 SPP12N50C3 2009-11-30 ...
Page 12
... PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute) Rev. 3.1 SPI12N50C3, SPA12N50C3 Page 12 SPP12N50C3 2009-11-30 ...
Page 13
... PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.1 SPI12N50C3, SPA12N50C3 Page 13 SPP12N50C3 2009-11-30 ...
Page 14
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.1 SPI12N50C3, SPA12N50C3 Page 14 SPP12N50C3 2009-11-30 ...