SPP12N50C3 Infineon Technologies, SPP12N50C3 Datasheet - Page 8

• Manufacturer Part Number: SPP12N50C3
• Description: MOSFET N-CH 560V 11.6A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP12N50C3

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.6 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014459; SPP12N50C3IN; SPP12N50C3X; SPP12N50C3XK; SPP12N50C3XTIN; SPP12N50C3XTIN

13 Forward characteristics of body diode
I
parameter: T j , t
15 Avalanche energy
E
par.: I
Rev. 3.1
F
AS
= f (V
mJ
10
10
10
10
350
250
200
150
100
= f ( T
A
50
-1
D
0
2
1
0
20
0
SPP12N50C3
= 5.5 A, V
SD
j
)
)
0.4
40
0.8
p
60
= 10 µs
DD
1.2
T
T
T
T
= 50 V
80
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
100
2
120
2.4
°C
V
T
V
j
SD
160
3
Page 8
14 Avalanche SOA
I
par.: T
16 Drain-source breakdown voltage
V
AR
(BR)DSS
= f (t
600
570
560
550
540
530
520
510
500
490
480
470
460
450
A
V
11
9
8
7
6
5
4
3
2
1
0
-60
10
j
≤ 150 °C
SPP12N50C3
AR
-3
= f ( T
SPI12N50C3, SPA12N50C3
)
10
-20
-2
j
)
10
T
20
j (START)
-1
=125°C
10
0
60
10
SPP12N50C3
1
100
10
2009-11-30
T
2
j (START)
°C
=25°C
t
T
µs
AR
j
180
10
4