SPP12N50C3 Infineon Technologies, SPP12N50C3 Datasheet - Page 5

• Manufacturer Part Number: SPP12N50C3
• Description: MOSFET N-CH 560V 11.6A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP12N50C3

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.6 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014459; SPP12N50C3IN; SPP12N50C3X; SPP12N50C3XK; SPP12N50C3XTIN; SPP12N50C3XTIN

Rev. 3.1
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
= f ( T
10
10
10
140
120
110
100
W
A
90
80
70
60
50
40
30
20
10
-1
-2
0
2
1
0
10
0
SPP12N50C3
0
DS
C
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
40
10
60
1
C
=25°C
80
100
10
120
2
°C
V
T
V
C
DS
160
10
3
Page 5
2 Power dissipation FullPAK
P
4 Safe operating area FullPAK
I
parameter: D = 0, T
D
tot
= f ( V
10
10
= f ( T
10
10
10
W
A
36
28
24
20
16
12
-1
-2
8
4
0
2
1
0
10
0
DS
0
C
SPI12N50C3, SPA12N50C3
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
40
10
60
C
1
= 25°C
80
SPP12N50C3
100
10
209-11-30
120
2
°C
V
T
V
C
DS
160
10
3