SPP12N50C3 Infineon Technologies, SPP12N50C3 Datasheet - Page 7

• Manufacturer Part Number: SPP12N50C3
• Description: MOSFET N-CH 560V 11.6A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP12N50C3

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.6 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014459; SPP12N50C3IN; SPP12N50C3X; SPP12N50C3XK; SPP12N50C3XTIN; SPP12N50C3XTIN

9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
Rev. 3.1
D
DS(on)
= f ( V
Ω
1.6
1.4
1.2
0.8
0.6
0.4
A
40
32
28
24
20
16
12
2
1
8
4
0
0
0
= f (I
GS
2
1
D
4V
); V
)
p
j
=150°C, V
4
2
= 10 µs
DS
4.5V
6
3
≥ 2 x I
8
4
5V
25°C
GS
10
D
5
x R
12
6
6.5V
8V
20V
5.5V
DS(on)max
14
7
16
8
150°C
6V
I
V
A
V
D
GS
20
10
Page 7
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
GS
DS(on)
Ω
2.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP12N50C3
SPP12N50C3
= f (T
SPI12N50C3, SPA12N50C3
Gate
10
-20
D
D
j
)
= 11.6 A pulsed
= 7 A, V
)
20
20
98%
0,2
30
typ
GS
V
60
DS max
40
= 10 V
SPP12N50C3
100
0,8 V
50
2009-11-30
DS max
°C
nC
T
Q
j
Gate
180
70