PSMN009-100W,127 NXP Semiconductors, PSMN009-100W,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN009-100W,127
• Description: MOSFET N-CH 100V 100A SOT429
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN009-100W,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 214nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055801127; PSMN009-100W; PSMN009-100W

Philips Semiconductors
October 1999
N-channel TrenchMOS
100
1000
100
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
0
10
0
I
Fig.2. Normalised continuous drain current.
1
D
0
0
1
Normalised Current Derating, ID (%)
& I
Normalised Power Derating, PD (%)
Fig.3. Safe operating area. T
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
Fig.1. Normalised power dissipation.
DM
25
25
= f(V
PD% = 100 P
ID% = 100 I
Mounting Base temperature, Tmb (C)
Mounting Base temperature, Tmb (C)
DS
Drain-Source Voltage, VDS (V)
50
50
); I
D.C.
10
DM
single pulse; parameter t
75
75
D
D
/I
/P
D 25 ˚C
D 25 ˚C
100
100
= f(T
100
= f(T
100 us
tp = 10 us
1 ms
10 ms
100 ms
transistor
125
125
mb
mb
mb
)
= 25 ˚C
)
150
150
1000
p
175
175
4
0.001
100
0.045
0.035
0.025
0.015
0.005
Fig.5. Typical output characteristics, T
0.01
90
80
70
60
50
40
30
20
10
0.05
0.04
0.03
0.02
0.01
Fig.6. Typical on-state resistance, T
0.1
0
1
1E-06
0
0
Drain Current, ID (A)
0
Drain-Source On Resistance, RDS(on) (Ohms)
Transient thermal impedance, Zth j-mb (K/W)
4.2 V
0.1
0.05
0.02
Fig.4. Transient thermal impedance.
0.2
D = 0.5
0.2
single pulse
4.4 V
VGS = 10 V
10
Z
8 V
1E-05
th j-mb
0.4
I
4.6 V
D
20
= f(V
= f(t); parameter D = t
Drain-Source Voltage, VDS (V)
0.6
30
1E-04
Drain Current, ID (A)
R
4.8 V
DS
DS(ON)
Pulse width, tp (s)
0.8
40
); parameter V
6 V
1E-03
= f(V
50
1
5 V
PSMN009-100W
60
1.2
GS
1E-02
8 V
)
Product specification
P
D
70
1.4
GS
tp
VGS = 10V
80
p
T
1E-01
1.6
/T
Tj = 25 C
j
D = tp/T
4 V
j
= 25 ˚C .
Tj = 25 C
= 25 ˚C .
90
1.8
4.6 V
4.8 V
Rev 1.100
6V
4.4 V
4.2 V
5 V
1E+00
100
2