PSMN009-100W,127 NXP Semiconductors, PSMN009-100W,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN009-100W,127
• Description: MOSFET N-CH 100V 100A SOT429
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN009-100W,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 214nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055801127; PSMN009-100W; PSMN009-100W

Philips Semiconductors
October 1999
N-channel TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics
15
14
13
12
11
10
100
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
I
0
F
0
Gate-source voltage, V
= f(V
0
Tj = 25 C
ID = 100A
Source-Drain Diode Current, IF (A)
VGS = 0 V
Fig.14. Typical reverse diode current.
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
20
SDS
40
); conditions: V
60
Source-Drain Voltage, VSDS (V)
80
Gate charge, Q
GS
V
175 C
100 120 140 160 180 200 220 240
(V)
GS
VDD = 20 V
= f(Q
GS
G
G
= 0 V; parameter T
)
(nC)
Tj = 25 C
1
transistor
1.1 1.2 1.3 1.4 1.5
VDD = 80 V
j
6
avalanche current (I
1000
100
10
Fig.15. Maximum permissible non-repetitive
1
0.001
Maximum Avalanche Current, I
unclamped inductive load
0.01
Tj prior to avalanche = 150 C
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
PSMN009-100W
AV
(ms)
Product specification
1
25 C
Rev 1.100
10
AV
);