BUK7L11-34ARC,127 NXP Semiconductors, BUK7L11-34ARC,127 Datasheet - Page 12

MOSFET N-CH 34V 75A TO220AB

BUK7L11-34ARC,127

Manufacturer Part Number
BUK7L11-34ARC,127
Description
MOSFET N-CH 34V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7L11-34ARC,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
34V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3.8V @ 1mA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
2506pF @ 25V
Power - Max
172W
Mounting Type
Through Hole
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057492127
BUK7L11-34ARC
BUK7L11-34ARC
Philips Semiconductors
8. Revision history
Table 6:
BUK7L11-34ARC_4
Product data sheet
Document ID
BUK7L11-34ARC_4
Modifications:
BUK7L11_34ARC-03
Modifications:
BUK7L11_34ARC-02
Modifications:
BUK7L11_34ARC-01
Revision history
Release
date
20051216 Product
20031203 Product
20030522 Product
20030423 Product
The format of this data sheet has been redesigned to comply with the new
presentation and information standard of Philips Semiconductors.
Figure 18
Avalanche ruggedness parameter description in limiting values changed from:
‘non-repetitive drain-source avalanche energy’ to ‘non-repetitive drain-source clamp
energy’.
Typical values of I
Data sheet
status
data sheet
data
data
data
and
Rev. 04 — 16 December 2005
Figure 19
DSS
Change
notice
-
-
-
-
added to characteristics table.
added.
Doc. number
-
9397 750 12163
9397 750 11472
9397 750 11178
BUK7L11-34ARC
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Supersedes
BUK7L11_34ARC-03
BUK7L11_34ARC-02
BUK7L11_34ARC-01
-
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