BUK7L11-34ARC,127 NXP Semiconductors, BUK7L11-34ARC,127 Datasheet - Page 2

• Manufacturer Part Number: BUK7L11-34ARC,127
• Description: MOSFET N-CH 34V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7L11-34ARC,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 34V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3.8V @ 1mA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2506pF @ 25V
• Power - Max: 172W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057492127; BUK7L11-34ARC; BUK7L11-34ARC

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
BUK7L11-34ARC_4
Product data sheet
Type number
BUK7L11-34ARC
Symbol Parameter
V
V
V
I
I
P
I
I
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
Electrostatic discharge
V
D
DM
DG(CL)
GS(CL)
DR
DRM
stg
j
DS
DGR
GS
tot
DS(CL)S
esd
Voltage is limited by clamping.
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
drain-gate clamping current
gate-source clamping current
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive drain-source clamped
energy
electrostatic discharge voltage; all
pins
Ordering information
Limiting values
Package
Name
3-lead TO-220
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C
Conditions
R
T
Figure 2
T
T
T
t
continuous
t
T
T
unclamped inductive load; I
V
starting at T
human body model; C = 100 pF;
R = 1.5 k
human body model; C = 250 pF;
R = 1.5 k
Rev. 04 — 16 December 2005
p
p
mb
mb
mb
mb
mb
mb
DS
GS
= 5 ms; = 0.01
= 5 ms; = 0.01
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
34 V; V
and
j
= 25 C
3
Figure 1
GS
GS
GS
= 10 V;
= 10 V;
= 10 V;
p
p
10 s;
10 s
Figure 2
D
= 60 A;
Figure 3
BUK7L11-34ARC
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[2] [4]
[2] [4]
[1]
[1]
[3]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
34
34
89
75
63
358
172
50
10
50
+175
+175
89
75
358
465
8
6
20
Version
2 of 14
Unit
V
V
V
A
A
A
A
W
mA
mA
mA
A
A
A
mJ
kV
kV
C
C