BUK7L11-34ARC,127 NXP Semiconductors, BUK7L11-34ARC,127 Datasheet - Page 3

• Manufacturer Part Number: BUK7L11-34ARC,127
• Description: MOSFET N-CH 34V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7L11-34ARC,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 34V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3.8V @ 1mA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2506pF @ 25V
• Power - Max: 172W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057492127; BUK7L11-34ARC; BUK7L11-34ARC

Philips Semiconductors
BUK7L11-34ARC_4
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(1) Capped at 75 A due to package.
P
(%)
(A)
120
10
10
I
D
der
10
80
40
0
3
2
1
function of mounting base temperature
T
P
0
1
mb
der
= 25 C; I
=
Limit R
------------------------
P
tot 25 C
50
P
DSon
tot
DM
(1)
= V
is single pulse.
DS
/ I
100 %
100
D
150
T
03aa16
mb
( C)
Rev. 04 — 16 December 2005
200
DC
10
Fig 2. Continuous drain current as a function of
(1) Capped at 75 A due to package.
100
(A)
I
D
80
60
40
20
0
V
mounting base temperature
0
GS
10 V
(1)
50
BUK7L11-34ARC
TrenchPLUS standard level FET
V
DS
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
(V)
100
t
100 s
1 ms
10 ms
100 ms
p
= 10 s
150
T
mb
03nj52
03nj50
( C)
10
200
2
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