BUK7L11-34ARC,127 NXP Semiconductors, BUK7L11-34ARC,127 Datasheet - Page 7

• Manufacturer Part Number: BUK7L11-34ARC,127
• Description: MOSFET N-CH 34V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7L11-34ARC,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 34V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3.8V @ 1mA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2506pF @ 25V
• Power - Max: 172W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057492127; BUK7L11-34ARC; BUK7L11-34ARC

Philips Semiconductors
BUK7L11-34ARC_4
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R
(m )
(A)
400
I
300
200
100
DSon
D
25
20
15
10
0
5
T
function of drain-source voltage; typical values
T
of drain current; typical values
0
j
0
j
20
16
= 25 C
= 25 C
5
6
2
100
7
14
4
8
12
200
V
6
GS
9.5
5
4.5
8.5
7.5
7
6.5
5.5
9
8
6
(V) = 10
10
V
300
GS
(V) = 20
8
I
V
D
DS
03nj48
(A)
03nj47
(V)
Rev. 04 — 16 December 2005
400
10
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
a
1.5
0.5
30
25
20
15
10
2
1
0
5
T
of gate-source voltage; typical values
-60
factor as a function of junction temperature
a
j
5
= 25 C; I
=
----------------------------- -
R
DSon 25 C
R
DSon
D
0
BUK7L11-34ARC
= 30 A
10
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
60
15
120
V
GS
03aa27
T
j
03nj46
(V)
( C)
180
20
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