BUK7L11-34ARC,127 NXP Semiconductors, BUK7L11-34ARC,127 Datasheet - Page 8

• Manufacturer Part Number: BUK7L11-34ARC,127
• Description: MOSFET N-CH 34V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7L11-34ARC,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 34V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3.8V @ 1mA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2506pF @ 25V
• Power - Max: 172W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057492127; BUK7L11-34ARC; BUK7L11-34ARC

Philips Semiconductors
BUK7L11-34ARC_4
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
(S)
g
40
30
20
10
fs
5
4
3
2
1
0
0
I
junction temperature
T
drain current; typical values
-60
D
j
0
= 1 mA; V
= 25 C; V
min
max
typ
20
0
DS
DS
= V
= 25 V
GS
60
40
120
60
T
I
D
j
03nh86
( C)
03nj44
(A)
Rev. 04 — 16 December 2005
180
80
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
I
10
10
10
10
10
10
4000
(pF)
3000
2000
1000
D
C
-1
-2
-3
-4
-5
-6
T
gate-source voltage
0
V
as a function of drain-source voltage; typical
values
10
0
j
GS
= 25 C; V
-1
= 0 V; f = 1 MHz
min
DS
BUK7L11-34ARC
= V
2
1
TrenchPLUS standard level FET
GS
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
typ
C
C
C
oss
rss
iss
10
4
max
V
V
GS
DS
(V)
03nj49
(V)
03nh87
10
6
2
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