IRF9Z24NS International Rectifier, IRF9Z24NS Datasheet - Page 2

• Manufacturer Part Number: IRF9Z24NS
• Description: MOSFET P-CH 55V 12A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z24NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24NS

Electrical Characteristics @ T
IRF9Z24NS/L
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
Source-Drain Ratings and Characteristics

‚
I
I
Notes:
ƒ
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
on
S
rr
V
S
fs
For recommended footprint and soldering techniques refer to application note #AN-994.
2
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
SD
rr
(BR)DSS
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
R
I
Starting T
T
SD
G
J
= 25 , I
/ T
-7.2A, di/dt
175°C
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) •
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 3.7mH
AS
= -7.2A. (See Figure 12)
-280A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
„
… Uses IRF9Z24N data and test conditions
Pulse width
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
-55
2.5
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.05 –––
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
350
170
––– 0.175
–––
–––
–––
–––
13
55
23
37
7.5
92
47
84
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.6
130
-25
5.1
19
300µs; duty cycle
10
-12
-48
71
V/°C
nH
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5…
showing the
p-n junction diode.
T
T
di/dt = -100A/µs „…
MOSFET symbol
integral reverse
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -7.2A
= -7.2A
= 25°C, I
= 25°C, I
= 3.7 , See Fig. 10 „…
= 24
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= -44V
= -10V, See Fig. 6 and 13 „…
= -28V
= 0V
= -25V
= 20V
= -20V
2%.
GS
, I
D
S
F
D
Conditions
= -250µA
D
D
Conditions
= -7.2A, V
= -7.2A
GS
GS
= -250µA
= -7.2A
= -7.2A
= 0V, T
= 0V
D
www.irf.com
= -1mA…
GS
G
J
„
= 150°C
= 0V
S
+L
D
S
„
D
)