IRF9Z24NS International Rectifier, IRF9Z24NS Datasheet - Page 4

• Manufacturer Part Number: IRF9Z24NS
• Description: MOSFET P-CH 55V 12A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z24NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24NS

IRF9Z24NS/L
4
1 0 0
0.1
1 0
7 0 0
6 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
1
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 15 0°C
J
Drain-to-Source Voltage
0.6
-V
V
S D
D S
Forward Voltage
C
C
C
V
C
C
C
, S ourc e-to-D rain V oltage (V )
, D rain-to-S ourc e V oltage (V )
0.8
rss
oss
iss
G S
is s
rs s
o ss
= 0V ,
= C
= C
= C
T = 2 5°C
J
1.0
g s
d s
g d
+ C
+ C
1 0
1.2
g d
gd
f = 1M H z
, C
1.4
d s
S H O R T E D
V
G S
1.6
= 0V
1.8
1 0 0
A
A
1 0 0
1 0
Fig 8. Maximum Safe Operating Area
2 0
1 6
1 2
1
8
4
0
0
1
Fig 6. Typical Gate Charge Vs.
T
T
S ing le P u lse
I
D
C
J
= -7 .2 A
Gate-to-Source Voltage
= 25 °C
= 17 5°C
O P E R A TIO N IN T H IS A R E A L IM IT E D
-V
D S
Q , Total G ate C harge (nC )
5
G
, D rain-to-S ourc e V oltage (V )
V
V
D S
D S
1 0
B Y R
= -44 V
= -28 V
1 0
D S (o n)
FO R TE S T CIR C U IT
1 5
S E E FIG U R E 1 3
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2 0
1 m s
1 0 µ s
1 0 0 µ s
1 0 m s
1 0 0
2 5
A
A