IRF9Z24NS International Rectifier, IRF9Z24NS Datasheet - Page 7

• Manufacturer Part Number: IRF9Z24NS
• Description: MOSFET P-CH 55V 12A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z24NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24NS

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V
GS
Re-Applied
Voltage
Reverse
Recovery
Current

*
Reverse Polarity of D.U.T for P-Channel
‚
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
*
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
ƒ
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Low Stray Inductance
Ground Plane
Current Transformer
Low Leakage Inductance
D =
-
G
Period
„
P.W.
+
IRF9Z24NS/L
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
7