IRF9Z24NS International Rectifier, IRF9Z24NS Datasheet - Page 3

• Manufacturer Part Number: IRF9Z24NS
• Description: MOSFET P-CH 55V 12A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z24NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24NS

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1 0 0
Fig 3. Typical Transfer Characteristics
1 0 0
Fig 1. Typical Output Characteristics
1 0
1 0
1
1
0.1
4
TO P
BOT TOM - 4.5V
-V
-V
5
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
G S
VGS
D S
, Ga te -to-Source Volta ge (V)
, D rain-to-S ourc e V oltage (V )
6
1
T = 25 °C
J
7
V
2 0µ s P U L S E W ID TH
-4.5 V
2 0µ s P U LS E W ID TH
T = 2 5°C
T
DS
c
J
= 25°C
= -2 5 V
1 0
8
T = 1 7 5 °C
J
9
1 0 0
1 0
A
A
1 0 0
1 0
2.0
1.5
1.0
0.5
0.0
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
TOP
BOTTOM - 4.5V
Fig 4. Normalized On-Resistance
I
D
= -12 A
-V
T , Junction T em perature (°C )
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
J
VGS
D S
Vs. Temperature
0
, D rain-to-S ource V oltage (V )
IRF9Z24NS/L
1
2 0
4 0
-4 .5 V
6 0
8 0
2 0µ s P U LS E W ID TH
T = 1 75 °C
T
C
J
= 175°C
1 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
V
G S
= -1 0V
3
1 0 0
A
A