IRF9Z24NS International Rectifier, IRF9Z24NS Datasheet
IRF9Z24NS
Specifications of IRF9Z24NS
Related parts for IRF9Z24NS
IRF9Z24NS Summary of contents
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... Advanced Process Technology l Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...
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... IRF9Z24NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Ga te -to-Source Volta ge ( Fig 3. Typical Transfer Characteristics www.irf.com TOP = 25°C BOTTOM - 4. 0.1 Fig 2. Typical Output Characteristics 2 1 °C 1 0.0 A -60 -40 - Fig 4. Normalized On-Resistance IRF9Z24NS/L VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V 2 0µ 175° ° rain-to-S ource V oltage ( - Junction T em perature (° ...
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... IRF9Z24NS iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0° 5° 0.1 0.4 0.6 0.8 1.0 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage TIO ° 5° ing lse ...
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... Tem perature (° Fig 9. Maximum Drain Current Vs. Case Temperature 0 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com -10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d( Fig 10b. Switching Time Waveforms N o tes : lse tio IRF9Z24NS D.U. µ d(off 0 ...
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... IRF9Z24NS Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 15V tarting unc tion T em perature (°C ) Fig 12c. Maximum Avalanche Energy (BR)DSS Fig 13b. Gate Charge Test Circuit . -7.2 A ...
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... Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% = 5.0V for Logic Level and 3V Drive Devices GS Fig 14. For P-Channel HEXFETS IRF9Z24NS/L „ P.W. Period [ ] *** V =10V ...
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... IRF9Z24NS Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Part Marking Information 2 D Pak TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...
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... Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com IRF9Z24NS/L 9 ...
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... IRF9Z24NS/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...