IRF9Z24NS International Rectifier, IRF9Z24NS Datasheet - Page 5

• Manufacturer Part Number: IRF9Z24NS
• Description: MOSFET P-CH 55V 12A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z24NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24NS

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0 . 0 1
1 2
0.1
9
6
3
0
1 0
0 . 0 0 0 0 1
1
2 5
Fig 9. Maximum Drain Current Vs.
D = 0 .5 0
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0 .2 0
0 .0 5
0 .0 2
0 .1 0
0 .0 1
5 0
(T H E R M A L R E S P O N S E )
T , C as e Tem perature (°C )
S IN G L E P U L S E
Case Temperature
C
7 5
0 . 0 0 0 1
1 0 0
1 2 5
t , R e c ta n g u la r P u lse D u ra tio n (s e c )
1
1 5 0
0 . 0 0 1
1 7 5
A
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
10%
90%
V
GS
DS
0 . 0 1
R
Pulse Width
Duty Factor
G
-10V
t
d(on)
V
GS
N o tes :
1 . D u ty f ac to r D = t
2 . P e a k T = P
V
DS
t
r
IRF9Z24NS/L
µs
J
D M
D.U.T.
x Z
0.1
1
/ t
th J C
R
t
2
d(off)
D
P
D M
+ T
C
t
f
t
1
t 2
+
-
V
DD
5
1
A