IRF9Z24NS International Rectifier, IRF9Z24NS Datasheet - Page 6

• Manufacturer Part Number: IRF9Z24NS
• Description: MOSFET P-CH 55V 12A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z24NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24NS

IRF9Z24NS/L
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
-10V
6
Fig 13a. Basic Gate Charge Waveform
I
V
A S
G
R G
-2 0 V
V D S
Q
GS
t p
I A S
D .U .T
0 .0 1
t p
L
Q
Charge
Q
GD
G
D R IV E R
V
(BR)DSS
15V
V D D
A
2 5 0
2 0 0
1 5 0
1 0 0
5 0
0
2 5
Fig 13b. Gate Charge Test Circuit
Fig 12c. Maximum Avalanche Energy
S tarting T , J unc tion T em perature (°C )
12V
V
5 0
GS
Same Type as D.U.T.
Current Regulator
.2 F
J
Vs. Drain Current
7 5
50K
-3mA
Current Sampling Resistors
.3 F
1 0 0
I
G
1 2 5
T O P
B O T TO M
www.irf.com
D.U.T.
I
D
1 5 0
+
-
V
DS
-5 .1A
-7.2 A
-2 .9A
I
D
1 7 5
A