TPC8018-H(TE12L) Toshiba, TPC8018-H(TE12L) Datasheet - Page 2

• Manufacturer Part Number: TPC8018-H(TE12L)
• Description: MOSFET N-CH 30V 18A 8-SOP
• Manufacturer: Toshiba

Specifications of TPC8018-H(TE12L)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2265pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPC8018-HTR

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
(Note 5)
* Weekly code: (Three digits)
TPC8018
H
DD
= 24 V, T
Characteristic
(a)
ch
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25°C (initial), L = 0.5 mH, R
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
G
2
= 25 Ω, I
65.8
Max
125
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= 18 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPC8018-H
2006-11-16