TPC8018-H(TE12L) Toshiba, TPC8018-H(TE12L) Datasheet - Page 6

• Manufacturer Part Number: TPC8018-H(TE12L)
• Description: MOSFET N-CH 30V 18A 8-SOP
• Manufacturer: Toshiba

Specifications of TPC8018-H(TE12L)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2265pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPC8018-HTR

1000
100
0.1
10
1
0.1
* Single - pulse
Curves must be derated
linearly with increase in
temperature.
Ta=25℃
I D max (Pulse) *
Drain-source voltage V
1000
100
0.1
10
0.001
Safe operating area
1
1
(1) Device mounted on a glass-epoxy board (a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2a)
(Note 2b)
10ms *
0.01
V DSS max
10
DS
t=1ms *
(V)
0.1
100
Pulse width t
r
r
6
th
th
1
– t
– t
w
w
w
(s)
10
100
Single - pulse
(2)
(1)
1000
TPC8018-H
2006-11-16