TPC8018-H(TE12L) Toshiba, TPC8018-H(TE12L) Datasheet - Page 5

• Manufacturer Part Number: TPC8018-H(TE12L)
• Description: MOSFET N-CH 30V 18A 8-SOP
• Manufacturer: Toshiba

Specifications of TPC8018-H(TE12L)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2265pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPC8018-HTR

10000
1000
100
10
1.6
1.2
0.8
0.4
10
8
−80
6
4
2
0
0.1
2
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
V GS = 4.5 V
(2)
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
0
1
R
DS (ON)
P
D
(1)Device mounted on a
(2)Device mounted on a
ｔ＝10s
40
80
glass-epoxy board(a) (Note 2a)
glass-epoxy board(b) (Note 2b)
– Ta
I D = 4.5A,9A,18A
– Ta
80
10
DS
I D = 18A
DS
C rss
C iss
120
C oss
I D = 4.5A,9A
°
(V)
120
C)
°
C)
100
160
160
5
1000
100
0.1
2.5
1.5
0.5
10
50
40
30
10
20
−80
1
2
1
0
0
0
0
Common source
I D = 18 A
Ta = 25°C
Pulse test
10
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
V DS
−40
Drain-source voltage V
Ambient temperature Ta (
−0.2
Ta = 25°C
Pulse test
Total gate charge Q
4.5
8
Dynamic input/output
3
0
characteristics
−0.4
16
I
DR
V
1
th
– V
40
– Ta
V GS
DS
−0.6
24
80
g
DS
V GS = 0 V
V DD = 6 V
TPC8018-H
(nC)
24
−0.8
°
32
(V)
120
C)
2006-11-16
12
−1.0
160
40
20
8
16
12
4
0