TPC8018-H(TE12L) Toshiba, TPC8018-H(TE12L) Datasheet - Page 4

• Manufacturer Part Number: TPC8018-H(TE12L)
• Description: MOSFET N-CH 30V 18A 8-SOP
• Manufacturer: Toshiba

Specifications of TPC8018-H(TE12L)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2265pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPC8018-HTR

1000
100
0.1
50
40
20
10
10
20
16
12
30
0
1
8
4
0
0.1
0
0
10
6
8
Common source
V DS = 10 V
Pulse test
4
Drain-source voltage V
Gate-source voltage V
1
0.2
4.5
3.5
Drain current I
3.3
2
1
100
0.4
⎪Y
I
I
D
D
3.2
fs
– V
– V
⎪ – I
Ta = −55°C
3
DS
GS
Ta = −55°C
0.6
D
25
100
D
Common source
Ta = 25°C Pulse test
Common source
V DS = 10 V
Pulse test
10
4
GS
DS
(A)
V GS = 2.8V
0.8
25
(V)
(V)
5
3.1
2.9
3
100
1
6
4
0.16
0.12
0.08
0.04
100
0.2
50
40
30
20
10
10
0
1
0
0.1
0
0
6
5
10
Common source
Ta = 25°C
Pulse test
V GS = 10 V
Drain-source voltage V
Gate-source voltage V
4.5
0.4
2
4
3.8
4.5
Drain current I
3.6
1
R
0.8
V
DS (ON)
4
I
DS
D
– V
– V
3.5
DS
GS
– I
1.2
6
D
Common source
Ta = 25°C Pulse test
3.4
D
Common source
Ta = 25°C
Pulse test
10
GS
DS
(A)
V GS = 2.8V
I D = 18 A
1.6
(V)
(V)
TPC8018-H
8
4.5
9
3.3
3.2
3.1
3
2006-11-16
100
10
2