BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 15

• Manufacturer Part Number: BLF574,112
• Description: TRANSISTOR RF LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF574,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 26.5dB
• Voltage - Rated: 110V
• Current Rating: 56A
• Current - Test: 1A
• Voltage - Test: 50V
• Power - Output: 400W
• Forward Transconductance Gfs (max / Min): 17 S
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 56 A
• Power Dissipation: 500 W
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 600W
• Power Gain (typ)@vds: 26.5@50VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 72@50VpF
• Reverse Capacitance (typ): 1.5@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4736; 934061965112

NXP Semiconductors
9. Package outline
Fig 17. Package outline SOT539A
BLF574_2
Product data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT539A
H
0.210
0.156
5.33
3.96
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.006
0.003
0.15
0.08
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
13.72
0.540
e
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
Rev. 02 — 24 February 2009
0.375
0.365
9.53
9.27
E 1
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.147
0.107
3.73
2.72
w 2
w 3
5
L
M
M
C
0.130
0.120
3.30
3.05
C
p
F
p
M
B
0.091
0.079
2.31
2.01
Q
HF / VHF power LDMOS transistor
w 1
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
M
10.29
10.03
0.405
0.395
E 1
U 2
c
0.010 0.020
© NXP B.V. 2009. All rights reserved.
0.25
Q
w 1
BLF574
ISSUE DATE
99-12-28
00-03-03
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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