BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 15
![TRANSISTOR RF LDMOS SOT539A](/photos/5/63/56383/blf574_112_sml.jpg)
BLF574,112
Manufacturer Part Number
BLF574,112
Description
TRANSISTOR RF LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF574112.pdf
(18 pages)
Specifications of BLF574,112
Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
225MHz
Gain
26.5dB
Voltage - Rated
110V
Current Rating
56A
Current - Test
1A
Voltage - Test
50V
Power - Output
400W
Forward Transconductance Gfs (max / Min)
17 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
56 A
Power Dissipation
500 W
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
600W
Power Gain (typ)@vds
26.5@50VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
72@50VpF
Reverse Capacitance (typ)
1.5@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4736
934061965112
934061965112
NXP Semiconductors
9. Package outline
Fig 17. Package outline SOT539A
BLF574_2
Product data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT539A
H
0.210
0.156
5.33
3.96
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.006
0.003
0.15
0.08
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
13.72
0.540
e
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
Rev. 02 — 24 February 2009
0.375
0.365
9.53
9.27
E 1
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.147
0.107
3.73
2.72
w 2
w 3
5
L
M
M
C
0.130
0.120
3.30
3.05
C
p
F
p
M
B
0.091
0.079
2.31
2.01
Q
HF / VHF power LDMOS transistor
w 1
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
M
10.29
10.03
0.405
0.395
E 1
U 2
c
0.010 0.020
© NXP B.V. 2009. All rights reserved.
0.25
Q
w 1
BLF574
ISSUE DATE
99-12-28
00-03-03
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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