BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 18

TRANSISTOR RF LDMOS SOT539A

BLF574,112

Manufacturer Part Number
BLF574,112
Description
TRANSISTOR RF LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF574,112

Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
225MHz
Gain
26.5dB
Voltage - Rated
110V
Current Rating
56A
Current - Test
1A
Voltage - Test
50V
Power - Output
400W
Forward Transconductance Gfs (max / Min)
17 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
56 A
Power Dissipation
500 W
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
600W
Power Gain (typ)@vds
26.5@50VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
72@50VpF
Reverse Capacitance (typ)
1.5@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4736
934061965112
NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.1.1
7.1.2
7.1.3
7.2
8
8.1
8.2
8.2.1
8.2.2
8.2.3
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ruggedness in class-AB operation. . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Impedance information . . . . . . . . . . . . . . . . . . 10
RF performance . . . . . . . . . . . . . . . . . . . . . . . 11
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
HF / VHF power LDMOS transistor
Date of release: 24 February 2009
Document identifier: BLF574_2
BLF574
All rights reserved.

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