BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 3

• Manufacturer Part Number: BLF574,112
• Description: TRANSISTOR RF LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF574,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 26.5dB
• Voltage - Rated: 110V
• Current Rating: 56A
• Current - Test: 1A
• Voltage - Test: 50V
• Power - Output: 400W
• Forward Transconductance Gfs (max / Min): 17 S
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 56 A
• Power Dissipation: 500 W
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 600W
• Power Gain (typ)@vds: 26.5@50VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 72@50VpF
• Reverse Capacitance (typ): 1.5@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4736; 934061965112

NXP Semiconductors
6. Characteristics
BLF574_2
Product data sheet
Table 6.
T
Table 7.
Mode of operation: CW; f = 225 MHz; RF performance at V
T
Symbol Parameter
V
V
V
I
I
I
g
R
C
C
C
Symbol Parameter
G
RL
DSS
DSX
GSS
j
case
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
rs
iss
oss
p
= 25 C; per section unless otherwise specified.
in
= 25 C; unless otherwise specified; in a class-AB production test circuit.
power gain
input return loss
drain efficiency
drain-source breakdown voltage V
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
feedback capacitance
input capacitance
output capacitance
DC characteristics
RF characteristics
Rev. 02 — 24 February 2009
Conditions
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
Conditions
P
P
P
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
GS
GS
L
L
L
= 8.33 A
= 400 W
= 400 W
= 400 W
= 10 V; I
= 50 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
DS
DS
D
D
D
= 2.5 mA
+ 3.75 V;
+ 3.75 V;
DS
DS
HF / VHF power LDMOS transistor
= 250 mA
= 500 mA
= 12.5 A
= 50 V
= 50 V;
= 50 V;
= 50 V;
= 50 V; I
= 0 V
Dq
= 1000 mA for total device;
Min Typ Max Unit
110 -
1.25 1.7
1.35 1.85 2.35 V
-
29
-
-
-
-
-
-
Min Typ Max Unit
25
13
66
© NXP B.V. 2009. All rights reserved.
BLF574
-
37.5 -
-
17
0.14 -
1.5
204 -
72
26.5 28
20
70
-
2.25 V
2.8
280 nA
-
-
-
-
-
3 of 18
V
A
S
pF
pF
pF
dB
dB
%
A