BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 8
![TRANSISTOR RF LDMOS SOT539A](/photos/5/63/56383/blf574_112_sml.jpg)
BLF574,112
Manufacturer Part Number
BLF574,112
Description
TRANSISTOR RF LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF574112.pdf
(18 pages)
Specifications of BLF574,112
Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
225MHz
Gain
26.5dB
Voltage - Rated
110V
Current Rating
56A
Current - Test
1A
Voltage - Test
50V
Power - Output
400W
Forward Transconductance Gfs (max / Min)
17 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
56 A
Power Dissipation
500 W
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
600W
Power Gain (typ)@vds
26.5@50VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
72@50VpF
Reverse Capacitance (typ)
1.5@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4736
934061965112
934061965112
NXP Semiconductors
BLF574_2
Product data sheet
Fig 7.
T1
T2
Component layout for class-AB application circuit
C1
C2
C3
C4 C5
L6
L5
Rev. 02 — 24 February 2009
C6
C7
C8
C9
R1
R2
L8
L7
C10
C11
L2
L3
L10
L9
R3
C13
C14
C15
C12
C16
L1
R4
L4
+
+
L11
L12
HF / VHF power LDMOS transistor
C18
C17
C19
C20
C21
C22
© NXP B.V. 2009. All rights reserved.
BLF574
C23
C24
T3
T4
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