BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 2
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BLF574,112
Manufacturer Part Number
BLF574,112
Description
TRANSISTOR RF LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF574112.pdf
(18 pages)
Specifications of BLF574,112
Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
225MHz
Gain
26.5dB
Voltage - Rated
110V
Current Rating
56A
Current - Test
1A
Voltage - Test
50V
Power - Output
400W
Forward Transconductance Gfs (max / Min)
17 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
56 A
Power Dissipation
500 W
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
600W
Power Gain (typ)@vds
26.5@50VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
72@50VpF
Reverse Capacitance (typ)
1.5@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4736
934061965112
934061965112
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF574_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
4
5
Type number
BLF574
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-c)
Connected to flange.
R
th(j-c)
is measured under RF conditions.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to case
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
-
Rev. 02 — 24 February 2009
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Conditions
T
Conditions
case
= 80 C; P
[1]
Simplified outline
L
= 400 W
HF / VHF power LDMOS transistor
1
3
2
4
5
Typ
0.23
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
BLF574
3
4
Max
110
+11
56
+150
225
Version
SOT539A
1
2
Unit
K/W
sym117
2 of 18
5
Unit
V
V
A
C
C