BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 2

• Manufacturer Part Number: BLF574,112
• Description: TRANSISTOR RF LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF574,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 26.5dB
• Voltage - Rated: 110V
• Current Rating: 56A
• Current - Test: 1A
• Voltage - Test: 50V
• Power - Output: 400W
• Forward Transconductance Gfs (max / Min): 17 S
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 56 A
• Power Dissipation: 500 W
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 600W
• Power Gain (typ)@vds: 26.5@50VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 72@50VpF
• Reverse Capacitance (typ): 1.5@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4736; 934061965112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF574_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
4
5
Type number
BLF574
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-c)
Connected to flange.
R
th(j-c)
is measured under RF conditions.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to case
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
-
Rev. 02 — 24 February 2009
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Conditions
T
Conditions
case
= 80 C; P
[1]
Simplified outline
L
= 400 W
HF / VHF power LDMOS transistor
1
3
2
4
5
Typ
0.23
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
BLF574
3
4
Max
110
+11
56
+150
225
Version
SOT539A
1
2
Unit
K/W
sym117
2 of 18
5
Unit
V
V
A
C
C