BFG97,115 NXP Semiconductors, BFG97,115 Datasheet - Page 10

• Manufacturer Part Number: BFG97,115
• Description: TRANS NPN 15V 5.5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG97,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 25
• Frequency (max): 5.5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1986-2; 933919920115; BFG97 T/R

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
f = 900 MHz.
f = 900 MHz.
(dB)
Fig.20 Power gain as a function of output power.
G p
(%)
Fig.18 Efficiency as a function of output power.
η
80
70
60
50
40
10
8
6
4
2
0
0
0
0.5
0.5
6 V
V
CE
7.5 V
=
7.5 V
10 V
6 V
1
1
V
10 V
CE
P
P
OUT
OUT
=
MEA961
MEA960
(W)
(W)
1.5
1.5
10
handbook, halfpage
handbook, halfpage
P OUT
f = 900 MHz.
G UM
I
Fig.21 Maximum unilateral power gain as a
Fig.19 Output power as a function of input power.
(dB)
C
(W)
= 70 mA; V
1.5
0.5
50
40
30
20
10
0
1
0
10
0
function of frequency.
CE
= 10 V; T
100
10
amb
2
= 25 C.
200
10
3
Product specification
P IN (mW)
f (MHz)
V
MEA962
7.5 V
MBB802
10 V
CE
BFG97
6 V
=
10
300
4