BFG97,115 NXP Semiconductors, BFG97,115 Datasheet - Page 2

• Manufacturer Part Number: BFG97,115
• Description: TRANS NPN 15V 5.5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG97,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 25
• Frequency (max): 5.5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1986-2; 933919920115; BFG97 T/R

NXP Semiconductors
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It features excellent output voltage
capabilities, and is primarily intended
for use in MATV applications.
PNP complement is the BFG31.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
V
I
P
h
f
G
V
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
stg
j
CBO
CEO
tot
o
CBO
CEO
EBO
tot
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
4
open emitter
open base
up to T
I
I
f = 500 MHz; T
I
f = 500 MHz; T
I
f = 800 MHz; T
I
d
f
C
C
C
C
C
(pqr)
im =
emitter
base
emitter
collector
= 70 mA; V
= 70 mA; V
= 70 mA; V
= 70 mA; V
= 70 mA; V
open emitter
open base
open collector
up to T
60 dB; R
DESCRIPTION
s
= 793.25 MHz; T
= 125 C (note 1)
2
s
CONDITIONS
= 125 C (note 1)
CE
CE
CE
CE
CE
L
CONDITIONS
amb
amb
amb
= 75 ;
= 10 V; T
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
= 25 C
amb
j
= 25 C
= 25 C
age
Top view




25




MIN.





65

Fig.1 SOT223.
1
MIN.
Product specification




80
5.5
16
12
700
TYP.
20
15
3
100
1
150
175
2
MAX.
20
15
100
1





MAX.
BFG97
4
MSB002 - 1
V
V
V
mA
W
C
C
3
UNIT
V
V
mA
W
GHz
dB
dB
mV
UNIT