BFQ67W,115 NXP Semiconductors, BFQ67W,115 Datasheet - Page 3

• Manufacturer Part Number: BFQ67W,115
• Description: TRANS NPN 10V 20MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFQ67W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 10V
• Transistor Type: NPN
• Frequency - Transition: 8GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Noise Figure (db Typ @ F): 1.3dB @ 1GHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934021070115::BFQ67W T/R::BFQ67W T/R

NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Note
1. G
September 1995
R
I
h
C
C
C
f
G
F
j
CBO
T
FE
SYMBOL
= 25 C, unless otherwise specified.
NPN 8 GHz wideband transistor
th j-s
c
e
re
SYMBOL
UM
G
s
UM
UM
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
=
10 log
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
thermal resistance from junction to
soldering point
--------------------------------------------------------- - dB.

1
–
PARAMETER
S
11
S
PARAMETER
2
 1
21

2
–
S
22
2

I
I
I
I
I
I
T
I
T
I
T

f = 1 GHz

f = 1 GHz

f = 2 GHz
I
f = 2 GHz; Z

f = 2 GHz
I
f = 2 GHz; Z
E
C
E
C
C
C
C
C
C
C
s
s
s
s
amb
amb
amb
= 0; V
= 15 mA; V
= i
= i
= 0; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
= 5 mA; V
= 
= 
= 
= 
e
c
= 25 C
= 25 C
= 25 C
opt
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
; I
up to T
3
12
C
C
C
C
= 5 V
= 8 V; f = 1 MHz
CONDITIONS
EB
CB
= 5 mA; V
= 15 mA; V
= 5 mA; V
s
= 15 mA; V
s
CE
CE
is zero and
CE
CE
CE
CE
= 60 
= 60 
= 0.5 V; f = 1 MHz
= 8 V; f = 1 MHz
= 8 V;
= 8 V;
s
CONDITIONS
= 5 V
= 8 V; f = 2 GHz;
= 8 V; f = 1 GHz
= 8 V; f = 2 GHz;
= 118 C; note 1
CE
CE
CE
CE
= 8 V;
= 8 V;
= 8 V;
= 8 V;

60












MIN.
THERMAL RESISTANCE

100
0.7
1.3
0.5
8
13
8
1.3
2
2.2
2.5
2.7
3
TYP. MAX.
Product specification
190 K/W
BFQ67W
50













nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
UNIT