BFQ67W,115 NXP Semiconductors, BFQ67W,115 Datasheet - Page 6

• Manufacturer Part Number: BFQ67W,115
• Description: TRANS NPN 10V 20MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFQ67W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 10V
• Transistor Type: NPN
• Frequency - Transition: 8GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Noise Figure (db Typ @ F): 1.3dB @ 1GHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934021070115::BFQ67W T/R::BFQ67W T/R

NXP Semiconductors
September 1995
handbook, halfpage
handbook, full pagewidth
NPN 8 GHz wideband transistor
I
f = 1 GHz; Z
V
Fig.10 Minimum noise figure as a function of
C
CE
= 5 mA; V
(dB)
F
= 8 V; f = 1 GHz.
4
3
2
1
0
1
collector current.
o
CE
= 50 .
= 8 V;
180°
10
0
−135°
I C (mA)
135°
0.2
0.2
0.2
MRC044
0.5
0.5
10
2
Fig.11 Noise circle.
0.5
F = 3 dB
F = 2.5 dB
F = 2 dB
F min = 1.5 dB
−90°
90°
6
1
1
1
opt
2
2
2
5
−45°
45°
MRC046
5
5
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFQ67W