BFQ67W,115 NXP Semiconductors, BFQ67W,115 Datasheet - Page 5

• Manufacturer Part Number: BFQ67W,115
• Description: TRANS NPN 10V 20MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFQ67W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 10V
• Transistor Type: NPN
• Frequency - Transition: 8GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Noise Figure (db Typ @ F): 1.3dB @ 1GHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934021070115::BFQ67W T/R::BFQ67W T/R

NXP Semiconductors
In Figs 6 to 9, G
MSG = maximum stable gain; G
gain.
September 1995
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
V
I
C
CE
gain
(dB)
gain
(dB)
= 15 mA; V
Fig.6 Gain as a function of collector current.
= 8 V; f = 1 GHz; T
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.8 Gain as a function of frequency.
−2
CE
5
= 8 V; T
UM
MSG
= maximum unilateral power gain;
10
amb
G UM
10
amb
−1
= 25 C.
= 25 C.
15
20
max
1
= maximum available
25
G max
f (GHz)
I C (mA)
30
MRC042
MRC041
G max
MSG
G UM
35
10
5
handbook, halfpage
handbook, halfpage
I
I
C
C
gain
(dB)
gain
(dB)
= 30 mA; V
= 5 mA; V
50
40
30
20
10
50
40
30
20
10
10
0
0
10
Fig.7 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
−2
−2
CE
CE
= 8 V; T
= 8 V; T
MSG
MSG
G UM
10
amb
G UM
10
amb
−1
−1
= 25 C.
= 25 C.
1
1
Product specification
G max
f (GHz)
f (GHz)
G max
BFQ67W
MRC043
MRC040
10
10