BFQ67W,115 NXP Semiconductors, BFQ67W,115 Datasheet - Page 4

• Manufacturer Part Number: BFQ67W,115
• Description: TRANS NPN 10V 20MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFQ67W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 10V
• Transistor Type: NPN
• Frequency - Transition: 8GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Noise Figure (db Typ @ F): 1.3dB @ 1GHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934021070115::BFQ67W T/R::BFQ67W T/R

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
I
Fig.4
C
(mW)
P
C re
(pF)
= 0; f = 1 MHz.
tot
400
300
200
100
0.8
0.6
0.4
0.2
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
50
4
100
8
150
V
CB
T
MRC045- 1
s
MRC039
(
(V)
o
C)
200
12
4
handbook, halfpage
handbook, halfpage
(GHz)
V
Fig.3
V
Fig.5
h
CE
CE
T f
FE
120
= 5 V; T
= 8 V; f = 2 GHz; T
80
40
10
4
0
8
6
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
10
amb
20
= 25 C.
20
40
Product specification
30
I
C
I
BFQ67W
(mA)
C
MBB301
(mA)
MBB303
60
40