BFQ67W,115 NXP Semiconductors, BFQ67W,115 Datasheet - Page 4
![TRANS NPN 10V 20MA SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BFQ67W,115
Manufacturer Part Number
BFQ67W,115
Description
TRANS NPN 10V 20MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFQ67W115.pdf
(12 pages)
Specifications of BFQ67W,115
Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
300mW
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
10V
Transistor Type
NPN
Frequency - Transition
8GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 5V
Noise Figure (db Typ @ F)
1.3dB @ 1GHz
Dc Current Gain Hfe Max
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934021070115::BFQ67W T/R::BFQ67W T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFQ67W,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
I
Fig.4
C
(mW)
P
C re
(pF)
= 0; f = 1 MHz.
tot
400
300
200
100
0.8
0.6
0.4
0.2
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
50
4
100
8
150
V
CB
T
MRC045- 1
s
MRC039
(
(V)
o
C)
200
12
4
handbook, halfpage
handbook, halfpage
(GHz)
V
Fig.3
V
Fig.5
h
CE
CE
T f
FE
120
= 5 V; T
= 8 V; f = 2 GHz; T
80
40
10
4
0
8
6
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
10
amb
20
= 25 C.
20
40
Product specification
30
I
C
I
BFQ67W
(mA)
C
MBB301
(mA)
MBB303
60
40