BFQ67W,115 NXP Semiconductors, BFQ67W,115 Datasheet - Page 7

• Manufacturer Part Number: BFQ67W,115
• Description: TRANS NPN 10V 20MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFQ67W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 10V
• Transistor Type: NPN
• Frequency - Transition: 8GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Noise Figure (db Typ @ F): 1.3dB @ 1GHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934021070115::BFQ67W T/R::BFQ67W T/R

NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 8 GHz wideband transistor
I
I
C
C
= 15 mA; V
= 15 mA; V
CE
CE
= 8 V; Z
= 8 V.
o
= 50 .
Fig.13 Common emitter forward transmission coefficient (S
180°
180°
Fig.12 Common emitter input reflection coefficient (S
50
0
−135°
−135°
135°
135°
40
0.2
0.2
40 MHz
0.2
30
0.5
0.5
20
0.5
3 GHz
10
−90°
−90°
90°
90°
7
1
1
1
3 GHz
2
2
2
40 MHz
5
MRC048
−45°
−45°
45°
45°
MRC047
5
5
11
).
0°
0°
21
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFQ67W