BFG94,115 NXP Semiconductors, BFG94,115 Datasheet - Page 12

• Manufacturer Part Number: BFG94,115
• Description: TRANS NPN 10V 60MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG94,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 45 @ 30mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 45
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934002270115; BFG94 T/R; BFG94 T/R

Philips Semiconductors
PACKAGE OUTLINE
September 1995
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
NPN 6 GHz wideband transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
1
e
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
B
scale
1
EIAJ
12
2
c
H
7.3
6.7
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product specification
X
ISSUE DATE
96-11-11
97-02-28
v
A
BFG94
M
A
SOT223