BFP 640F H6327 Infineon Technologies, BFP 640F H6327 Datasheet - Page 7
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BFP 640F H6327
Manufacturer Part Number
BFP 640F H6327
Description
TRANS RF NPN 4V 50MA TSFP-4
Manufacturer
Infineon Technologies
Datasheet
1.BFP640FE6327.pdf
(10 pages)
Specifications of BFP 640F H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
40GHz
Noise Figure (db Typ @ F)
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain
23dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 30mA, 3V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
TSFP-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power gain G
I
f = parameter
Noise figure F =
V
C
CE
= 30mA
2.5
1.5
0.5
dB
= 3V, f = 1.8 GHz
2
1
0
30
24
22
20
18
16
14
12
10
0
8
6
4
2
0
0
0.5
Z
Z
S
S
10
= 50
= Z
ma
1
Sopt
, G
1.5
20
( I
ms
C
I
c
2
)
[mA]
=
2.5
30
( V
CE
3
)
3.5
40
V
V
CE
0.9
1.8
2.4
3
4
5
6
50
4.5
7
Noise figure F =
V
Noise figure F =
V
CE
CE
2.5
1.5
0.5
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= 3V, Z
2
1
0
= 3V, Z
2
1
0
0
0
f = 6GHz
f = 5GHz
f = 4GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
1
S
S
10
= Z
= Z
2
Sopt
Sopt
20
( I
( f )
3
C
f [GHz]
I
c
)
[mA]
4
30
I
I
C
C
2007-05-31
5
= 30mA
= 5.0mA
BFP640F
40
6
50
7