BFP 640F H6327 Infineon Technologies, BFP 640F H6327 Datasheet - Page 7

• Manufacturer Part Number: BFP 640F H6327
• Description: TRANS RF NPN 4V 50MA TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 640F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 23dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power gain G
I
f = parameter
Noise figure F =
V
C
CE
= 30mA
2.5
1.5
0.5
dB
= 3V, f = 1.8 GHz
2
1
0
30
24
22
20
18
16
14
12
10
0
8
6
4
2
0
0
0.5
Z
Z
S
S
10
= 50
= Z
ma
1
Sopt
, G
1.5
20
( I
ms
C
I
c
2
)
[mA]
=
2.5
30
( V
CE
3
)
3.5
40
V
V
CE
0.9
1.8
2.4
3
4
5
6
50
4.5
7
Noise figure F =
V
Noise figure F =
V
CE
CE
2.5
1.5
0.5
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= 3V, Z
2
1
0
= 3V, Z
2
1
0
0
0
f = 6GHz
f = 5GHz
f = 4GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
1
S
S
10
= Z
= Z
2
Sopt
Sopt
20
( I
( f )
3
C
f [GHz]
I
c
)
[mA]
4
30
I
I
C
C
2007-05-31
5
= 30mA
= 5.0mA
BFP640F
40
6
50
7