BFP 640F H6327 Infineon Technologies, BFP 640F H6327 Datasheet - Page 6

• Manufacturer Part Number: BFP 640F H6327
• Description: TRANS RF NPN 4V 50MA TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 640F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 23dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Third order Intercept Point IP
(Output, Z
V
Power gain G
V
f = parameter
CE
CE
dBm
dB
= parameter, f = 1.8 GHz
= 3V
30
24
21
18
15
12
30
26
24
22
20
18
16
14
12
10
9
6
3
0
8
0
0
S
=Z
10
10
L
ma
=50 )
, G
20
20
ms
= ( I
30
30
C
1V
)
40
40
3
= ( I
mA
mA
C
0.9
4V
3V
2V
1.8
2.4
3
4
5
6
I
I
)
C
C
60
60
6
Transition frequency f
f = 1GHz
V
Power Gain G
| S
V
CE
CE
21
GHz
|² = f (f)
dB
= parameter
= 3V, I
45
35
30
25
20
15
10
55
45
40
35
30
25
20
15
10
5
0
5
0
0
C
|S21|²
10
1
= 30mA
Gms
ma
, G
20
2
ms
T
30
=
3
= ( I
( f ),
C
40
4
2007-05-31
)
Gma
BFP640F
GHz
mA
3V
2V
1V
0.5V
I
f
C
60
6