BFP 640F H6327 Infineon Technologies, BFP 640F H6327 Datasheet - Page 4

• Manufacturer Part Number: BFP 640F H6327
• Description: TRANS RF NPN 4V 50MA TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 640F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 23dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
TITF1
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
0.22
1000
2
2
1.8
2.707
227.6
1.8
0.4
0.6
0.2
0.27
3
2
-0.0065
fA
V
-
V
-
fF
ps
A
V
ns
-
-
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =
TITF2
450
0.15
55
3.8
3.129
0.6
0.8
10
0
0.5
93.4
-1.42
0.8
7.291E-11
1.0E-5
4
-
A
-
mA
-
V
-
deg
-
fF
-
LBO =
LEO =
LCO =
LBI =
LEI =
LCI =
CBE =
CBC =
CCE =
KBO-EO = 0.1
KBO-CO = 0.01
KEO-CO = 0.11
KCI-EI = 0.2
KBI-CI = -0.08
KBI-EI = -0.05
RLBI =
RLEI =
RLCI =
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
Valid up to 6GHz
0.22
0.28
0.22
0.42
0.26
0.35
34
2
33
0.15
0.11
0.13
1.025
21
1
400
1.522
3.061
0.3
1.5
67.43
1
0.6
1.078
298
2007-05-31
BFP640F
nH
nH
nH
nH
nH
nH
fF
fF
fF
-
-
-
-
-
-
-
fA
-
fA
mA
-
V
fF
-
V
eV
K