BFP 640F H6327 Infineon Technologies, BFP 640F H6327 Datasheet - Page 8

• Manufacturer Part Number: BFP 640F H6327
• Description: TRANS RF NPN 4V 50MA TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 640F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 23dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source impedance for min.
noise figure vs. frequency
V
−0.1
0.1
0
CE
−0.2
0.2
−0.3
0.3
= 3 V, I
0.1
−0.4
0.4
0.2 0.3 0.4 0.5
−0.5
0.5
I
c
C
= 5.0mA
= 5 mA/ 30 mA
6GHz
5GHz
4GHz
3GHz
1
−1
1
2.4GHz
6GHz
1.5
1.8GHz
I
c
= 30mA
2
0.9GHz
−1.5
1.5
3
4 5
−2
2
−3
3
−4
4
−5
5
−10
10
8
2007-05-31
BFP640F