MT48H16M16LFBF-75:H TR Micron Technology Inc, MT48H16M16LFBF-75:H TR Datasheet - Page 42

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MT48H16M16LFBF-75:H TR

Manufacturer Part Number
MT48H16M16LFBF-75:H TR
Description
DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin VFBGA T/R
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H16M16LFBF-75:H TR

Package
54VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
8|6 ns
Operating Temperature
0 to 70 °C
Table 19: Burst Definition Table
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Burst Length
Continuous
2
4
8
n = A0–An/9/8 (location 0–y)
Starting Column Address
A2
0
0
0
0
1
1
1
1
A1
A1
0
0
1
1
0
0
1
1
0
0
1
1
A0
A0
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Cn, Cn + 1, Cn + 2, Cn + 3...Cn - 1,
Type = Sequential
42
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
Cn...
0-1
1-0
Order of Accesses Within a Burst
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Type = Interleaved
©2008 Micron Technology, Inc. All rights reserved.
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Not supported
Mode Register
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1
1-0

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