MT48H16M16LFBF-75:H TR Micron Technology Inc, MT48H16M16LFBF-75:H TR Datasheet - Page 79

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MT48H16M16LFBF-75:H TR

Manufacturer Part Number
MT48H16M16LFBF-75:H TR
Description
DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin VFBGA T/R
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H16M16LFBF-75:H TR

Package
54VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
8|6 ns
Operating Temperature
0 to 70 °C
Figure 48: Self Refresh Mode
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
High-Z
t CKS
t CMS
Precharge all
active banks
t AS
Single bank
PRECHARGE
All banks
Bank(s)
T0
t CKH
t CMH
t AH
t CK
Note:
1. Each AUTO REFRESH command performs a REFRESH cycle. Back-to-back commands are
t RP
T1
NOP
not required.
t CH
Enter self refresh mode
t CKS
t CL
REFRESH
AUTO
T2
CLK stable prior to exiting
self refresh mode
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
(Restart refresh time base)
Exit self refresh mode
Tn + 1
NOP
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t XSR
SELF REFRESH Operation
To + 1
©2008 Micron Technology, Inc. All rights reserved.
To + 2
REFRESH
AUTO
Don’t Care

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