MT48H16M16LFBF-75:H TR Micron Technology Inc, MT48H16M16LFBF-75:H TR Datasheet - Page 55

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MT48H16M16LFBF-75:H TR

Manufacturer Part Number
MT48H16M16LFBF-75:H TR
Description
DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin VFBGA T/R
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H16M16LFBF-75:H TR

Package
54VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
8|6 ns
Operating Temperature
0 to 70 °C
Figure 25: READ – DQM Operation
Command
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
Row
Row
Bank
t CMH
t AH
t AH
t AH
t CKH
t RCD
t CK
Note:
T1
NOP
1. For this example, BL = 4 and CL = 2.
Enable auto precharge
Disable auto precharge
t CMS
t CL
Column m
T2
READ
Bank
t CH
t CMH
CL = 2
T3
NOP
t LZ
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t AC
55
T4
NOP
D
OUT
t OH
t HZ
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
NOP
t LZ
t AC
T6
NOP
D
OUT
t OH
t AC
©2008 Micron Technology, Inc. All rights reserved.
T7
NOP
READ Operation
D
t OH
OUT
t HZ
T8
NOP
Don’t Care
Undefined

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