TSEV81102G0TPZR3 E2V, TSEV81102G0TPZR3 Datasheet - Page 29

• Manufacturer Part Number: TSEV81102G0TPZR3
• Manufacturer: E2V

Specifications of TSEV81102G0TPZR3

• Lead Free Status / RoHS Status: Not Compliant

Figure 6-3.
6.4.4
2105D–BDC–07/05
DEMUX − Axpproximative Model for 240 TBGA
Assumptions:
Square die 7.0 x 7.0 = 49 mm², 75 µm thick Epoxy/Ag glue, 0.40 mm copper thickness under die,
Sn60Pb40 columns diameter 0.76 mm, 23 x 23 mm TBGA
(Top half of thickness)
Epoxy/Ag glue
Temperature Diode Characteristic
Thermal Resistance Junction to case typical =
0.10 + 0.60 + 0.05 + 0.05 + 0.25 = 1.05°C/W
Thermal Resistance Junction to case Max = 1.40°C/W
λ = 0.025Watt/°C
Copper base
Copper base
λ = 0.95Watt/°C
Silicon Die
λ = 25Watt/°C
Black ink
Thermal Resistance from Junction to Bottom of Balls
49 mm²
Typical values
(values are in °C/Watt)
Silicon Junction
package
Top of
0.10
0.60
0.05
0.05
0.25
1.70
The theoretical characteristic of the diode according to the temperature when I = 3 mA is
depicted below.
Figure 6-4.
(104 balls)
2 internal
rows
1.87
0.40
0.25
(136 balls)
2 external
rows
Temperature Diode Characteristic
1.43
0.31
Tape + glue
over balls
λ = 0.02Watt/°C
Balls
PbSn
λ = 0.40Watt/°C
900m
800m
700m
1.0
-70.0
Vdiode
Case were all Bottom of Balls are connected to infinite heatsink
(values are in °C/Watt)
Silicon Junction
-20.0
Thermal Resistance Junction to bottom of balls = 4.8°C/W Max
0.10
0.60
0.05
Temperature (°C)
at bottom of balls
Infinite heatsink
DiodeT
I = 3 mA
dV/dT = 1.32 mV/°C
1.70
30.0
2.47
Reduction
0.25
80.0
1.74
at bottom of balls
Infinite heatsink
Junction
Silicon
2.45
2.47
130.0
Reduction
1.99
TS81102G0
at bottom of balls
Infinite heatsink
Junction
Silicon
3.55
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